GC - Green Silicon Carbide


GC (green silicon carbide) is a very high-purity silicon carbide (SiC) lapping powder produced by reacting silica and coke in an electric furnace at a temperature greater than 2000° C. This process produces the following qualities:

  • An α‑type corundum crystal configuration
  • A hardness just below diamond
  • Excellent chemical stability at room temperature.

The resulting product has superior lapping and polishing qualities that are not affected by chemicals and can generate sharp edges through fragmentation. GC is thus well-suited for many purposes, such as:

  • Precision lapping and dicing of crystal and ferrite
  • Slicing of silicon ingots
  • Processing materials ranging from ultra-hard metals and edged tools to soft metals such as brass and other copper alloys
  • Processing resins
  • Creating super-finishing precision grindstones

In addition, GC possesses the electrical properties of a semiconductor and thus has good heat conductivity and the ability to withstand high temperatures. This makes it useful as a material in fine ceramics.

Standard Specifications for Particle Size

Particle Size Particle Distribution (µm)
Maximum Particle Size Particle Size at d03 Particle Size at d50 Particle Size at d94
# 240 ≤ 127 ≤ 103 58.6 ± 3.0 ≥ 40.0
# 280 ≤ 112 ≤ 87.0 49.4 ± 3.0 ≥ 33.0
# 320 ≤ 98.0 ≤ 74.0 41.1 ± 2.5 ≥ 27.0
# 360 ≤ 86.0 ≤ 66.0 36.1 ± 2.0 ≥ 23.0
# 400 ≤ 75.0 ≤ 58.0 30.9 ± 2.0 ≥ 20.0
# 500 ≤ 63.0 ≤ 50.0 26.4 ± 2.0 ≥ 16.0
# 600 ≤ 53.0 ≤ 43.0 21.1 ± 1.5 ≥ 13.0
# 700 ≤ 45.0 ≤ 37.0 17.9 ± 1.3 ≥ 11.0
# 800 ≤ 38.0 ≤ 31.0 14.7 ± 1.0 ≥ 9.00
# 1000 ≤ 32.0 ≤ 27.0 11.9 ± 1.0 ≥ 7.00
# 1200 ≤ 27.0 ≤ 23.0 9.90 ± 0.80 ≥ 5.50
# 1500 ≤ 23.0 ≤ 20.0 8.40 ± 0.60 ≥ 4.50
# 2000 ≤ 19.0 ≤ 17.0 6.90 ± 0.60 ≥ 4.00
# 2500 ≤ 16.0 ≤ 14.0 5.60 ± 0.50 ≥ 3.00
# 3000 ≤ 13.0 ≤ 11.0 4.00 ± 0.50 ≥ 2.00
# 4000 ≤ 11.0 ≤ 8.00 3.00 ± 0.40 ≥ 1.30
# 6000 ≤ 8.00 ≤ 5.00 2.00 ± 0.40 ≥ 0.80
# 8000 ≤ 6.00 ≤ 3.50 1.20 ± 0.30 ≥ 0.60(1)
# 10000     0.51~0.70  
# 20000     0.50(2)  
# 30000     0.32(2)  

Notes:
Particle size is measured by Electrical sensing zone methods up to size #8000, by Sedimentation balance methods for #10000, and by Laser diffraction sispersion methods for #20000 and #30000.
(1)Particle size at 75% point (dv-75 value).
(2)A representative value.

Quality Standards

Particle Size Specific Gravity Chemical Composition (%)
SiC C.F Fe.s
#240 ~ #3000 ≥ 3.18 ≥ 96.0 ≤ 0.50 ≤ 0.30
#4000 ~ #10000 ≥ 3.16 ≥ 92.0 ≤ 2.00 ≤ 0.30
#20000 ~ #30000 ≥ 3.16 ≥ 90.0 ≤ 2.00 ≤ 0.30

 

Product Stats:

Category:
Lapping & Grinding

Application:
Super Finishing Rubber Grindstone, Soft Metals Lapping, Ceramics Lapping, Super Finishing Vitrified Grindstone, Super Finishing Phenol Bond Grindstone, Super Hard Metals Lapping, Ferrite Lapping, Crystal Lapping, LiTaO3 Lapping, LiNbO3 Lapping, Silicon Wafer Lapping, Ferrite Wire-Saw Materials, Silicon Ingot Wire-Saw Materials, processing resins, material uses, super finishing, lapping, precision lapping, dicing crystal, dicing ferrite, processing soft metals, slicing Si ingots, processing ultra hard metals, polishing, Super Finishing PVA Grindstone, Precision Coated Polishing Tape, Fine Silicon Carbide Ceramic Materials, Precision Coating Reinforcing Agent

Type:
SiC lapping powder, Precision Coating Materials, Super Finishing Grindstone Materials, Wire-Saw Materials, Precision Lapping Materials, lapping powder, Fine Ceramics Materials

Material:
green silicon carbide